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Questions Available: 29
Year: 2023
Topic: Semiconductor electronics: Materials, devices and simple circuits
1.
Given below are two statements:
Statement I:Photovoltaic devices can convert optical radiation into electricity.
Statement II:Zener diode is designed to operate under reverse bias in breakdown region. In the light of the above statements, choose the most appropriate answer from the options given below.
(1).
Both Statement I and Statement II are incorrect
(2).
Statement I is correct but Statement II is incorrect
(3).
Statement I is incorrect but Statement II is correct
(4).
Both Statement I and Statement II are correct

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Solution
Year: 2023
Topic: Semiconductor electronics: Materials, devices and simple circuits
2.
A full wave rectifier circuit consists of two p-n junction diodes, a centre-tapped transformer, capacitor and a load resistance. Which of these components remove the ac ripple from the rectified output?
(1).
p-n junction diodes
(2).
Capacitor
(3).
Load resistance
(4).
A centre-tapped transformer

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Solution
Year: 2025
Topic: Semiconductor electronics: Materials, devices and simple circuits
3.
The output (Y) of the given logic implementation is similar to the output of an/a _______ gate.
(1).
NOR
(2).
AND
(3).
NAND
(4).
OR

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Year: 2025
Topic: Semiconductor electronics: Materials, devices and simple circuits
4.
A full wave rectifier circuit with diodes (\(\text{D}_1\)) and (\(\text{D}_2\)) is shown in the figure. If input supply voltage \(\text{V}_\text{in}\,=\,220\,sin\left(100\pi \text{t}\right)\) volt, then at t= 15 msec
(1).
(\(\text{D}_1\)) and (\(\text{D}_2\)) both are reverse biased
(2).
(\(\text{D}_1\)) is forward biased, (\(\text{D}_2\)) is reverse biased
(3).
(\(\text{D}_1\)) is reverse biased, (\(\text{D}_2\)) is forward biased
(4).
(\(\text{D}_1\)) and (\(\text{D}_2\)) both are forward biased

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Solution
Year: 2024
Topic: Semiconductor electronics: Materials, devices and simple circuits
5.
A logic circuit provides the output Y as per the following truth table :

The expression for the output Y is
(1).
\(A⋅B+\bar{A}\)
(2).
\(\displaystyle A⋅\bar{B}+\bar{A}\)
(3).
\(\displaystyle \bar{B} \)
(4).
B

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Year: 2024
Topic: Semiconductor electronics: Materials, devices and simple circuits
6.
Consider the following statements A and B and identify the correct answer:

A. For a solar-cell, the I-V characteristics lies in the IV quadrant of the given graph.
B. In a reverse biased pn junction diode, the current measured (in µA), is due to majority charge carriers.
(1).
A is correct but B is incorrect
(2).
A is incorrect but B is correct
(3).
Both A and B are correct
(4).
Both A and B are incorrect

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Solution
Year: 2024
Topic: Semiconductor electronics: Materials, devices and simple circuits
7.
The output (Y) of the given logic gate is similar to the output of an/a
(1).
NAND gate
(2).
NOR gate
(3).
OR gate
(4).
AND gate

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Solution
Year: 2023
Topic: Semiconductor electronics: Materials, devices and simple circuits
8.
For the following logic circuit, the truth table is
(1).
(2).
(3).
(4).

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Year: 2022
Topic: Semiconductor electronics: Materials, devices and simple circuits
9.

In the given circuits (a), (b), and (c), the potential drop across the two p − n junctions are equal in
(1).
Circuit (a) only
(2).
Circuit (b) only
(3).
Circuit (c) only
(4).
Both circuits (a) and (c)

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Solution
Year: 2022
Topic: Semiconductor electronics: Materials, devices and simple circuits
10.
In half wave rectification, if the input frequency is 60 Hz, then the output frequency would be
(1).
Zero
(2).
30 Hz
(3).
60 Hz
(4).
120 Hz

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Solution
Year: 2022
Topic: Semiconductor electronics: Materials, devices and simple circuits
11.

The truth table for the given logic circuit is
(1).
(2).
(3).
(4).

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Solution
Year: 2021
Topic: Semiconductor electronics: Materials, devices and simple circuits
12.
The electron concentration in an n-type semiconductor is the same ashole concentration in a p-type semiconductor. An external field(electric) is applied across each of them. Compare the currents in them.
(1).
Current in n-type = current in p-type
(2).
Current in p-type > current in n-type
(3).
Current in n-type > current in p-type
(4).
No current will flow in p-type, current will only flow in n-type

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Solution
Year: 2021
Topic: Semiconductor electronics: Materials, devices and simple circuits
13.
Consider the following statements (A) and (B) and identify the correct answer.
(A). A zener diode is connected in reverse bias, when used as a voltage regulator.
(B). The potential barrier of p-n junction lies between 0.1 V to 0.3 V.
(1).
(A) and (B) both are correct.
(2).
(A) and (B) both are incorrect
(3).
(A) is correct and (B) is incorrect.
(4).
(A) is incorrect but (B) is correct.

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Solution
Year: 2021
Topic: Semiconductor electronics: Materials, devices and simple circuits
14.
For the given circuit, the input digital signals are applied at theterminals A, B and C. What would be the output at the terminal y ?
(1).
(2).
(3).
(4).

Test
Solution
Year: 2020
Topic: Semiconductor electronics: Materials, devices and simple circuits
15.
The increase in the width of the depletion region in a p-n junction diodeis due to:
(1).
reverse bias only
(2).
both forward bias and reverse bias
(3).
increase in forward current
(4).
forward bias only

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Solution
Year: 2020
Topic: Semiconductor electronics: Materials, devices and simple circuits
16.
For transistor action, which of the following statements is correct?
(1).
Base, emitter and collector regions should have same size.
(2).
Both emitter junction as well as the collector junction are forward biased
(3).
The base region must be very thin and lightly doped
(4).
Base, emitter and collector regions should have same doping concentrations.

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Solution
Year: 2020
Topic: Semiconductor electronics: Materials, devices and simple circuits
17.
For the logic circuit shown, the truth table is:
(1).
(2).
(3).
(4).

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Solution
Year: 2020
Topic: Semiconductor electronics: Materials, devices and simple circuits
18.
The energy required to break one bond in DNA is \(10^{-20}\, \text{J}\). This value in eV is nearly
(1).
0.6
(2).
0.06
(3).
0.006
(4).
6

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Solution
Year: 2019
Topic: Semiconductor electronics: Materials, devices and simple circuits
19.
For a p -type semiconductor, which of the following statements is true?
(1).
Electrons are the majority carriers and pentavalent atoms are the dopants.
(2).
Electrons are the majority carriers and trivalent atoms are the dopants.
(3).
Holes are the majority carriers and trivalent atoms are the dopants.
(4).
Holes are the majority carriers and pentavalent atoms are the dopants.

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Solution
Year: 2019
Topic: Semiconductor electronics: Materials, devices and simple circuits
20.

The correct Boolean operation represented by the circuit diagramdrawn is
(1).
NOR
(2).
AND
(3).
OR
(4).
NAND

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Solution
Year: 2018
Topic: Semiconductor electronics: Materials, devices and simple circuits
21.
In the combination of the following gates the output Y can be written in terms of inputs A and B as
(1).
(2).
(3).
(4).

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Solution
Year: 2018
Topic: Semiconductor electronics: Materials, devices and simple circuits
22.
In the circuit shown in the figure,

the input voltage \(V_i\) is 20 V , \(V_{BE}\) = 0 and \(V_{CE}\) = 0. The values of \(I_B\), \(I_C\)and β are given by
(1).
\(I_B = 40µA, I_C = 10mA, β = 250\)
(2).
\(I_B = 25µA, I_C = 5mA, β = 200\)
(3).
\(I_B = 20µA, I_C = 5mA, β = 250\)
(4).
\(I_B = 40µA, I_C = 5mA, β = 125\)

Test
Solution
Year: 2018
Topic: Semiconductor electronics: Materials, devices and simple circuits
23.
In a p − n junction diode, change in temperature due to heating
(1).
affects only reverse resistance
(2).
affects only forward resistance
(3).
does not affect resistance of p − n junction
(4).
affects the overall V - I characteristics of p − n junction

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Solution
Year: 2017
Topic: Semiconductor electronics: Materials, devices and simple circuits
24.
In a common emitter transistor amplifier the audio signal voltage across the collector is 3 V. The resistance of collector is 3 KΩ. If current gain is 100 and the base resistance is 2 KΩ, the voltage and power gain of the amplifier is
(1).
15 and 200
(2).
150 and 15000
(3).
20 and 2000
(4).
200 and 1000

Test
Solution
Year: 2017
Topic: Semiconductor electronics: Materials, devices and simple circuits
25.
The given electrical network is equivalent to
(1).
OR gate
(2).
NOR gate
(3).
NOT gate
(4).
AND gate

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Solution
Year: 2017
Topic: Semiconductor electronics: Materials, devices and simple circuits
26.
Which one of the following represents forward bias diode?
(1).
(2).
(3).
(4).

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Solution
Year: 2016
Topic: Semiconductor electronics: Materials, devices and simple circuits
27.
To get output 1 for the following circuit, the correct choice for the inputis
(1).
A = 1,B = 1, C = 0
(2).
A = 1, B = 0, C= 1
(3).
A = 0, B = 1,C = 0
(4).
A = 1 , B = 0, C = 0

Test
Solution
Year: 2016
Topic: Semiconductor electronics: Materials, devices and simple circuits
28.
A npn transistor is connected in common emitter configuration in a given amplifier. A load resistance of \(800\, \Omega\) is connected in the collector circuit and the voltage drop across it is \(0.8\, \text{V}\). If the current amplification factor is \(0.96\) and the input resistance of the circuit is \(192\, \Omega\), the voltage gain and the power gain of the amplifier will respectively be
(1).
4, 4
(2).
4, 3.69
(3).
4, 3.84
(4).
3.69, 3.84

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Solution
Year: 2016
Topic: Semiconductor electronics: Materials, devices and simple circuits
29.
Consider the junction diode as ideal. The value of current flowing through AB is
(1).
\(10^{−1}\,A\)
(2).
\(10^{−3}\,A\)
(3).
\(0\,A\)
(4).
\(10^{−2}\,A\)

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